SK Hynix's U.S. subsidiary Solidigm is negotiating with the U.S. Department of Commerce to invest $45 billion in building a new NAND flash memory fab in the United States, contingent on receiving approval to ship equipment to its Dalian, China facility for upgrades. According to Bloomberg sources, Solidigm has proposed that revenue generated from the upgraded Dalian plant would directly fund the U.S. construction, and the enhanced technology could also be deployed at the American site. Solidigm told the Commerce Department that total investment in the U.S. fab could ultimately approach $100 billion. New York State is among the candidate locations, with construction potentially beginning as early as next year. Both Solidigm and SK Hynix stated that no final decision has been made. The announcement comes one week after SK Hynix canceled Solidigm's planned ~$10 billion IPO.